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Superlinear photoluminescence in silicon nanocrystals : The role of excitation wavelength

Identifieur interne : 009B95 ( Main/Exploration ); précédent : 009B94; suivant : 009B96

Superlinear photoluminescence in silicon nanocrystals : The role of excitation wavelength

Auteurs : F. Trojanek [République tchèque] ; K. Zidek [République tchèque] ; K. Neudert [République tchèque] ; I. Pelant [République tchèque] ; P. Maty [République tchèque]

Source :

Journal of luminescence [ 0022-2313 ] ; 2006.

RBID : Pascal:07-0004268

Descripteurs français

Pascal (Inist)
- Photoluminescence, Implantation ion, Dépendance temps, Etat excité, Fluence, Processus ultrarapide, Photoexcitation, Silicium, Nanocristal, Si, 7867B.

English descriptors

KwdEn :
- Excited states, Fluence, Ion implantation, Nanocrystal, Photoexcitation, Photoluminescence, Silicon, Time dependence, Ultrafast process.

Abstract

We study the influence of the wavelength of picosecond excitation pulses on the properties of photoluminescence (PL) in a series of samples of silicon nanocrystals prepared by ion implantation into silica matrix. We observed a gradual change in the behaviour of the PL fast component (spectral shape, decay times, pump-intensity dependence) when tuning the excitation wavelength from 355 to 532 nm. We interpret the results in terms of an interplay between the PL originating from volume states of nanocrystals containing two photoexcited carrier pairs, and the PL due to the silicon oxide states. We discuss also the role of the implant fluence on the PL properties of samples.

Affiliations:

République tchèque

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Le document en format XML

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<front><div type="abstract" xml:lang="en">We study the influence of the wavelength of picosecond excitation pulses on the properties of photoluminescence (PL) in a series of samples of silicon nanocrystals prepared by ion implantation into silica matrix. We observed a gradual change in the behaviour of the PL fast component (spectral shape, decay times, pump-intensity dependence) when tuning the excitation wavelength from 355 to 532 nm. We interpret the results in terms of an interplay between the PL originating from volume states of nanocrystals containing two photoexcited carrier pairs, and the PL due to the silicon oxide states. We discuss also the role of the implant fluence on the PL properties of samples.</div>
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Superlinear photoluminescence in silicon nanocrystals : The role of excitation wavelength

Superlinear photoluminescence in silicon nanocrystals : The role of excitation wavelength

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri